Masakazu Kanechika: search on Z-Library

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1

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Kodama, Masahito, Sugimoto, Masahiro, Hayashi, Eiko, Soejima, Narumasa, Ishiguro, Osamu, Kanechika, Masakazu, Itoh, Kenji, Ueda, Hiroyuki, Uesugi, Tsutomu, Kachi, Tetsu

Journal:

Applied Physics Express

Year:

2008

Language:

english

File:

PDF, 658 KB

english, 2008

2

Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors

Katsuno, Takashi, Kanechika, Masakazu, Itoh, Kenji, Nishikawa, Koichi, Uesugi, Tsutomu, Kachi, Tetsu

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 927 KB

english, 2013

3

Study on leakage current of pn diode on GaN substrate at reverse bias

Masahiro Sugimoto, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 216 KB

english, 2011

4

Characterization of Ar ion etching induced damage for GaN

Keita Kataoka, Yasuji Kimoto, Kayo Horibuchi, Takamasa Nonaka, Naoko Takahashi, Tetsuo Narita, Masakazu Kanechika, Kazuhiko Dohmae

Journal:

Surface and Interface Analysis

Year:

2012

Language:

english

File:

PDF, 540 KB

english, 2012

5

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Advanced SiC and GaN power electronics for automotive systems

Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu

Year:

2010

Language:

english

File:

PDF, 233 KB

english, 2010

6

[IEEE 2007 Power Conversion Conference - Nagoya - Nagoya, Japan (2007.04.2-2007.04.5)] 2007 Power Conversion Conference - Nagoya - Vertical device operation of AlGaN/GaN HEMTs on free-standing n-GaN substrates

Sugimoto, Masahiro, Ueda, Hiroyuki, Kanechika, Masakazu, Soejima, Narumasa, Uesugi, Tsutomu, Kachi, Tetsu

Year:

2007

Language:

english

File:

PDF, 1.85 MB

english, 2007

7

[IEEE 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Waikoloa, HI, USA (2011.10.16-2011.10.19)] 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Automotive Applications of GaN Power Devices

Kachi, Tetsu, Kanechika, Masakazu, Uesugi, Tsutomu

Year:

2011

Language:

english

File:

PDF, 481 KB

english, 2011

8

Field-emission characteristics of a silicon tip defined by oxygen precipitate

Kanechika, Masakazu, Sugimoto, Noriaki, Mitsushima, Yasuichi

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 846 KB

english, 2005

9

n-type AlN layer by Si ion implantation

Kanechika, Masakazu, Kachi, Tetsu

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 325 KB

english, 2006

10

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

Kanechika, Masakazu, Sugimoto, Masahiro, Soejima, Narumasa, Ueda, Hiroyuki, Ishiguro, Osamu, Kodama, Masahito, Hayashi, Eiko, Itoh, Kenji, Uesugi, Tsutomu, Kachi, Tetsu

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 136 KB

english, 2007

11

Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method

Watanabe, Hideki, Kato, Masashi, Ichimura, Masaya, Arai, Eisuke, Kanechika, Masakazu, Ishiguro, Osamu, Kachi, Tetsu

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 189 KB

english, 2007

12

Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics

Kanechika, Masakazu, Mitsushima, Yasuichi

Journal:

Japanese Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 355 KB

english, 2000

13

A Gated Field Emission Triode Using Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching

Kanechika, Masakazu, Sugimoto, Noriaki, Mitsushima, Yasuichi

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 339 KB

english, 2002

14

Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions

Kanechika, Masakazu, Mitsushima, Yasuichi

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 240 KB

english, 2004

15

Positron annihilation and cathodoluminescence study on inductively coupled plasma etched GaN

Kataoka, Keita, Kanechika, Masakazu, Narita, Tetsuo, Kimoto, Yasuji, Uedono, Akira

Journal:

physica status solidi (b)

Year:

2015

Language:

english

File:

PDF, 260 KB

english, 2015

16

[IEEE 2017 17th International Workshop on Junction Technology (IWJT) - Uji, Japan (2017.6.1-2017.6.2)] 2017 17th International Workshop on Junction Technology (IWJT) - Ion implantation technique for conductivity control of GaN

Narita, Tetsuo, Kataoka, Keita, Kanechika, Masakazu, Kachi, Tetsu, Uesugi, Tsutomu

Year:

2017

Language:

english

File:

PDF, 390 KB

english, 2017

17

Theory of Tunneling in Double Barrier

Isawa, Yoshimasa, Kanechika, Masakazu

Journal:

Journal of the Physical Society of Japan

Year:

1991

File:

PDF, 580 KB

1991

18

Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

Sawada, Naoki, Narita, Tetsuo, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Horita, Masahiro, Kimoto, Tsunenobu, Suda, Jun

Journal:

Applied Physics Express

Year:

2018

Language:

english

File:

PDF, 2.49 MB

english, 2018

19

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

Maeda, Takuya, Narita, Tetsuo, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 918 KB

english, 2018

20

Evaluation of dislocations under the electrodes of GaN pn diodes by X-ray topography

Kanechika, Masakazu, Yamaguchi, Satoshi, Imanishi, Masayuki, Mori, Yusuke

Journal:

Japanese Journal of Applied Physics

Year:

2019

File:

PDF, 841 KB

2019

21

Shockley–Read–Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p–n + junction diodes

Maeda, Takuya, Narita, Tetsuo, Ueda, Hiroyuki, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun

Journal:

Japanese Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 594 KB

english, 2019

22

Shockley–Read–Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p–n + junction diodes

Maeda, Takuya, Narita, Tetsuo, Ueda, Hiroyuki, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun

Journal:

Japanese Journal of Applied Physics

Year:

2019

File:

PDF, 594 KB

2019

23

[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect

Maeda, Takuya, Narita, Tetsuo, Ueda, Hiroyuki, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun

Year:

2019

Language:

english

File:

PDF, 951 KB

english, 2019

24

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

Maeda, Takuya, Narita, Tetsuo, Ueda, Hiroyuki, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun

Journal:

Applied Physics Letters

Year:

2019

Language:

english

File:

PDF, 1.85 MB

english, 2019